| PART |
Description |
Maker |
| VNA-22 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFD9014 |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 1.1A的）
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| RFP-250250A4X50 |
Alumina Terminations 30 Watts, 50ohm
|
Anaren Microwave
|
| RFP-050060-15X50-2 |
Chip Terminations 4 Watts, 50ohm
|
Anaren Microwave
|
| RFP-800-50T |
Flanged Terminations 800 Watts, 50ohm
|
Anaren Microwave
|
| RFP-250250N6Z50-2 |
Aluminum Nitride Terminations 16 Watts, 50ohm
|
Anaren Microwave
|
| RFP-250375N4Z50-2 |
Aluminum Nitride Terminations 25 Watts, 50ohm
|
Anaren Microwave
|
| RFP-375375-6X50-2 |
Chip Terminations 300 Watts, 50ohm
|
Anaren Microwave
|
| MMCX-J-P-H-ST-EM1 |
50Ohm MMCX MICRO MINI JACKS & PLUGS
|
Samtec, Inc
|
